科研人员

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展长勇Changyong Zhan

副研究员,硕士生导师,工学博士

主要研究领域:

粒子束技术和物理气相沉积技术;核材料织构、缺陷和性能演化;材料表面与界面改性

联系方式:

邮箱zhanchangyong@scu.edu.cn, 电话13618009472

       (1981年出生),2010年毕业于四川大学原子核科学技术研究所核技术及应用专业,2008-2009年在香港城市大学(City University of Hong Kong)学习1年,2013-2014年在巴黎第十一大学(Université Paris-Sud)做访问学者1年。长期从事材料改性研究,获得国家自然科学基金和相关国家军工单位的项目支持。目前主要研究核材料及技术领域新型结构材料与粒子的相互作用和辐照效应,擅长表面、界面的改性和微观机理研究。在J. Nucl. Mater.Nuclear Inst. and Methods in Physics Research, ASurf. Coat. Tech.Appl. Surf. Sci.等国内外知名刊物上发表学术论文20余篇,获得授权专利多项。



Associate Professor, Ph.D.

Room 3-205,

Key Laboratory of Radiation Physics and Technology of Education Ministry of China,

Institute of Nuclear Science and Technology,

Sichuan University, Chengdu 610065, China

Email: zhanchangyong@scu.edu.cn

Tel: +86-28-85412230

Education and Employment

2005-2010, Sichuan University, Ph. D. candidate

2008-2009, City University of Hong Kong, Research Assistant

2013-2014, Université Paris-Sud, Visiting Scholar

2010-now, Sichuan University, Associate Professor

Interests

Ion beam technology and physical vapor deposition technologies

Applications of cathodic arc deposition, magnetron sputtering deposition, and ion beam

Nuclear Materials

Evolution of defects, texture and physical property

Surface and interface modifications of materials

Formation of coatings, films and nanostructures on substrate materials



代表性论文和成果 Selected Publications and Achievements):

1. H. Chen, CY. Zhan* Zhan*, WJ. Gong, PN. Du, RQ. Zhang*, JJ. Yang, Y. Wang, TG. Wei, HY. Yang, Y. Zou, BQ. Fu, Surface growth, inner defects and interface mixing of Cr coating on Zr alloy irradiated by 5 MeV protons at 400°C, J. Nucl. Mater. 586 (2023) 154696.

2. J. Wang, WJ. Gong, H. Chen, RQ. Zhang, Z. Ma, Y. Zou, Y. Feng, CY. Zhan*, JJ. Yang, Irradiation-accelerated corrosion/oxidation of the Cr coating prepared by arc-ion plating, Nucl. Eng. Des. 406 (2023) 112252.

3. W.J. Gong, H. Chen, C.Y. Zhan*, P.N. Du, R.Q. Zhang*, Y. Wang, T.G. Wei, H.Y. Yang, Y. Zou, J.J. Yang, Formation of voids in the Cr coatings with (110)-preferred orientation prepared by arc ion plating under an Au+ irradiation of 20 dpa, Surf. Coat. Tech. 425 (2021) 127750

4. AH Gong, Yu Zou, WJ Gong, JJ Yang, JC Wu, CY Zhan*, HX Xiao, C Yu, Calculation of full three-dimensional silicon detectors with stacking micrometer-sized pores for improving thermal neutrons detection, Nucl. Instrum. Methods Phys. Res. Sect. A 969 (2020) 164031.

5. B Liu, Y Zou, D Ren, LW Lin, CY Zhan*, Components and performance of graded Ge1-xCx:H coatings deposited by magnetron co-sputtering for IR wideband antireflection, Optik 206 (2020) 163366.

6. ZY Tan, YG Yuan, HA, Y Zou, JC Wu, CY Zhan*, Formation of microporous silicon in straight macropore on n-type silicon under front side illumination, Surf. Coat. Tech. 2019, 365, 109–114

7. CY Zhan, Y Zou, W Jiang, X Q Fan, Yong Jiang, Q J Feng, X L Li, H Sun, J C Wu, Study of electrical current reconstruction on macropore arrays etched electrochemically on lightly-doped n-Si, Appl. Surf. Sci. 2016, 362: 538–544.

8. CY Zhan, Y Zou, J C Wu, D Ren, B Liu, K F Huo, N K Huang, P K Chu,Self-sealing SiO2 pores on silicon formed by oxidation of microporous silicon,Microporous Mesoporous Mat. 174 (2013) 10–13

9. CY Zhan, Y Zou, J C Wu, P K Chu, Fabrication of Porous Silicon Nanotips by Using Argon Ion-beam Irradiation, J. Korea Phys. Soc. 2013, 63(2), 206-208.

10. XQ Fan, Y Jiang, CY Zhan*, Y Zou, J C Wu, N K Huang, Effect of electrochemical etching current on prepared perforated silicon structures for neutron detectors, Front. Mater. Sci. 2013, 7(1): 96-101

11. CY Zhan, PK Chu, D Ren, YC Xin, KF Huo, Y Zou, NK Huang, Release of hydrogen during transformation from porous silicon to silicon oxide at normal temperature, Int. J. Hydrog. Energy 2011, 36: 4513-4517.

12. CY Zhan, LW Wang, HY Dai, NK Huang, JQ Wang, Design and transmittance measurement of the Ge1-xCx antireflection coatings, J. Korea Phys. Soc., 2008, 52: S13-S16.

13. CY Zhan, LW Wang, NK Huang, Analysis of the Ge1-xCx films deposited by MFMST, Appl. Surf. Sci. 2007, 253: 7478-7482.

14. CY Zhan, LW Wang, NK Huang, Effect of bias on content of GeC in Ge1-xCx films, Chin. Phys. Lett. 2007, 24(3): 803-806.

授权专利(Licensed Patent

1. 展长勇,任丁,邹宇,刘波,林黎蔚,黄宁康,一种新型多孔硅及其制备方法,专利号 (Patent No.) ZL 201110344679.2

2. 展长勇,邹宇,任丁,伍建春,刘波,一种微型氚电池及其制备方法,专利号 (Patent No.) ZL 201210230553.7