刘波，男，1973年11月生，博士，研究员，博士生导师。2008年于西安交通大学材料科学与工程学院获博士学位。2009年3月到四川大学原子核科学技术研究所工作，2013年10月至2014年月9月由公派去法国巴黎十一大（国家纳米器件科学研究中心）从事研究工作。2012年评为副研究员。2020年评为研究员。

主要研究领域：

1. 先进功能薄膜制备及表征  

2. 离子束薄膜表面改性及研究

3. 功能薄膜界面_//表面调控研究

4. 新型聚变堆结构材料制备及辐照效应

Ph. D.

Professor

Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, People’s Republic of China;

Tel: (86) 13980921587

Email: liubo2009@scu.edu.cn

Education:

2001-2004 M. S. in Material Science, June 2008, Xi'an University of Architecture and Technology, Xi'an, P.R. China

2004-2008 Ph. D. in Material Science, June 2008, Xi'an Jiaotong University, Xi'an, P.R. China. (Advisor: Prof. Ke-Wei Xu)

Research Experience

2004-2008 Research assistant in Xu’s Group (nano-materials)

2009-2012 Lecture in Institute of Nuclear Science and Technology, Sichuan University

2012-    Associate Professor in Institute of Nuclear Science and Technology, Sichuan University

Current Research Interests

1) Preparation of nano-porous ultra-low dielectric constant (k) materials such as p-SiOC:H or p-SiC:H for Cu interconnect of advanced semiconductor devices by using PECVD, MOCVD technology and its properties under electrical, mechanical fields and thermal fields.

2) Microstructure and mechanical properties of nano-composite thin films such as Zr-Si-N、Zr-Ge-N、Ti-Si-C-N and so on that were produced by arc enhanced magnetron sputtering (AEMS) or physical vapor deposition (PVD)

3) The microstructure and properties evolution of nano-materials under extreme physical environment (nuclear radiation environment or space environment and so on)

4) Stress/strain effect on the functional properties of nano-materials; Surface and interface induced phase transformation of nano-materials

5) In-situ TEM investigation of deformation and fracture behaviors in W-Cu or W-Re alloy after high energy ion irradiation

Selected Publications and Achievements:

[1] Jianxiong Zou, Bo Liu*, Guohua Jiao*, Yuanfu Lu, Yuming Dong, and Qiran Li, The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization, Journal of Applied Physics, 2016, (120): 095305:1-7.

[2]Guohua Jiao, Bo Liu*, Qiran Li, Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration, Applied Physics A-Materials Science & Processing, 2015, (120):579–585.

[3] Shunli Chen, Bo Liu*, Liwei Lin*, Guohua Jiao, Microstructural development and helium bubble formation in Cu/W(Re) nanometer multilayer films irradiated byHe+ ion, Nuclear Instruments and Methods in Physics Research B, 2015, (354): 244–248.

[4]B. Liu, K.W. Xu, Improvement of Thermal Stability and Electrical Property of Cu/Cu(Zr)/SiOC:H Film Stack by Controlling the Structure and Composition of Zr(Ge) Nano-interlayer, Microelectronic Engineering, 2014, (118):41-46.

[5] B. Liu, L.W. Lin, D. Ren, et al., Cu(Ge) alloy films with zirconium addition on barrierless Si for excellent property improvements, Journal of Physics D:Applied Physics, 2013, (46): 155305:1-6.

[6] L.W. Lin, B. Liu*, D. Ren*, G.H. Jiao, K.W. Xu, Effect of sputtering bias voltage on the structure and properties of Zr-Ge-N diffusion  barrier films, Surface & Coatings Technology, 2013, (228):S237-S240. 

[7] B. Liu, J. J. Yang, C. H. Liu, et al., Ultrathin CuSiN/p-SiC:H bilayer capping barrier for Cu/ultralow-kdielectric integration, Applied Physics Letters, 2009 , 94(15): 153116.

[8] J. J. Yang, B. Liu*, et al., Homologous temperature dependence of global surface scaling behaviors of polycrystalline copper films, Applied Physics Letters, 2009, 95(19): 194104.

[9] B. Liu, Z. X. Song, K. W. Xu, An ultra-thin Zr(Ge) alloy film as an exhaustion interlayer combined with Cu(Zr) seed layer for the Cu/porous SiOC:H dielectric integration, Applied Physics Letters, 2008, (93):174108 (1-3).

[10] B. Liu, K. W. Xu, Z. X. Song, Multilayered metal capping barrier including CuSiN, for sub-65-nm technology nodes, Journal of Applied Physics,2007, (102): 076108 (1-3).